Abstract
The electromigration effect on the three-dimensional integrated circuits (3D-IC) scale solder joints with a Cu/Sn(25–50 μm)/Cu configuration was investigated using a field-emission scanning electron microscope (FE–SEM) combined with electron backscatter diffraction (EBSD) analysis system. Electron current stressing for a few days caused the pronounced accumulation of Cu6Sn5 in specific Sn grain boundaries (GBs). The EBSD analysis indicated that both the β-Sn crystallographic orientation and GB orientation play dominant roles in this accumulation. The dependencies of the Cu6Sn5 accumulation on the two above factors (i.e., Sn grain orientation and GB orientation) can be well rationalized via a proposed mathematic model based on the Huntington and Grone's electromigration theory with the Cu anisotropic diffusion data in a β-Sn lattice.
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