Abstract
Current induced switching (CIS) was recently observed in thin magnetic tunnel junctions and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. Here we study the CIS effect in tunnel junctions with a Ta layer deposited just below the insulating barrier. We observe enhanced resistance switching with increasing maximum applied current. Anomalous voltage–current characteristics with negative derivative were observed and this effect is attributed to heating in the tunnel junction. We also observe that, after repeatedly applying large current pulses, the electrical resistance decreases sharply through irreversible steps when ions are displaced into the barrier.
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