Abstract

In this study, electromigration (EM) behavior of Sn, Ag, and Cu thin film stripes that are deposited on the glass substrate by using electron-beam physical vapor deposition (EBPVD) has been investigated under a range of current densities. It was found that the Cu stripe shows a better property than the Ag stripe in resisting the EM effect and the EM resistivity of the Ag sample is better than the Sn sample. The reason causing this distinction is attributed to the activation energy (Ea) difference between the variety of metals.

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