Abstract
Unpassivated, pure aluminum films on 7000-Å-thick SiO2 were prepared by ionized cluster beam deposition in a vacuum of 2×10−6 Torr from a carbon crucible which had a nozzle of 2 mm diameter. The resulting particle beam was ionized by impact of electrons and accelerated by an electrical potential towards the substrate. The activation energy for electromigration for these films at temperatures between 125 and 200 °C was found to be 1.1 eV. The initial resistivity of the films was about 12 μΩ cm which decreased to 8 μΩ cm due to annealing at temperatures between 400 and 450 °C.
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