Electromechanical analysis of a piezoelectric semiconductor bilayer system with imperfect interface

Abstract

An electromechanical model of the bilayer structure consisting a piezoelectric semiconductor film and an elastic substrate with imperfect interface is established. The combined effects of piezoelectricity and flexoelectricity are taken into consideration simultaneously. Based on the Newmark model, closed-form expressions for the distributions of electron concentrations and relevant electromechanical fields in the bilayer composite beam system subjected to uniform temperature variation are obtained. The effects of interfacial parameter, flexoelectricity and initial carrier concentration have been discussed respectively. Different from the bilayer structure with perfect interface, it can be found that interfacial parameter plays a significant role in the electromechanical coupling characteristics of the bilayer system. Besides, the effect of flexoelectricity weakens the influence of imperfect interface to some extent. This research offers a new sight and guidance for practical applications of piezoelectric semiconductor multilayer systems.