Electromagnetically induced transparency in a GaAs/InAs/GaAs quantum well

Abstract

Nonlinear optical absorption spectra are analyzed and thereby the electromagnetically induced transparency is investigated in a GaAs/InAs/GaAs quantum well. The taken system is InAs sandwiched between GaAs semiconducting material. The confinement potential and well size of the quantum well are fixed. The three atomic sub-levels are considered and the system is analyzed using a density matrix approach. The intersubband electromagnetically induced transparency in the three level single quantum well is investigated theoretically. The optical susceptibilities, the Rabi frequency and the detuning parameters are investigated in the present work. The variation of real and imaginary parts of optical susceptibility as a function of normalized detuning is brought out. The refractive index and the group velocity of the probe light pulse are described. The variation of group index as a function of probe field energy is investigated. The dependence of the optical susceptibilities on the normalized detuning, refractive index and the group index is brought out.