Abstract
The suitability of bound exciton system in semiconductors is studied for use in nonlinear optical schemes based on EIT, such as “slow” or “stored” photons. We match the desired properties of such a system exhibiting EIT with the known physical realities of a semiconductor system, and suggest, in particular, two suitable schemes using donor impurities in GaAs. In addition to generic properties, we also focus on the influence of many neighboring levels and continuum levels, and on the effect of strong hole-mixing.
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