Electromagnetic waves and oscillations in the layered semiconductor-dielectric-semiconductor structure

Abstract

Theoretical and numerical studies of the electromagnetic properties of the layered semiconductor — dielectric — semiconductor (SDS) structure was carried out. It was shown that the weak damping guide and surface waves may exist in this structure and retardation of surface waves may be several times more than for the semiconductor — dielectric (SD) interface. If this structure contains reflections it leads to the formation of high Q-factor resonance oscillations. It was found that at the beginning of intermode coupling of two surface oscillations in the studied resonance structure, hybrid surface oscillations with near resonance frequencies are formed. Their electromagnetic field components along the wave propagation direction are orthogonal to each other and modulated along the SD interface by orthogonal envelopes.