Abstract
The wave concept iterative process is a procedure used for analyses planar circuits, this method consists in generating a recursive relationship between a wave source and reflected waves from the discontinuity plane which is divided into cells. A high computational speed has been achieved by using Fast Modal Transform (FMT). In this paper we study a patch antenna and MESFET transistor, to determine the electromagnetic characteristics of these structures.
Highlights
The MESFET or GaAs FET as it is called is a high performance form of field effect transistor that is used mainly for high performance microwave applications and in semiconductor RF amplifiers
GaAs FET standars for Gallium Arsenide, the substance from wich this FET or field effect transistor is made. [9], [10] The GaAs FET or MESFET shares many features with the standard junction FET or JFET, the MESFET is able to offer superior performance, especially in the region of RF microwave operation, especially for use within RF amplifiers. [1]
An iterative method is applied to active circuit, it consist in successive reflection between the circuit plan and its two sides
Summary
The MESFET or GaAs FET as it is called is a high performance form of field effect transistor that is used mainly for high performance microwave applications and in semiconductor RF amplifiers. The wave concept iterative process WCIP is defined as [4], [5] The Scattering (Diffraction) Operator Ŝ The scattering operator Ŝ is deduced from the equivalent circuit on each sub domain of the interface S. the boundary cond ition s is expressed for fields in the equation: E 1
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