Electroluminescent devices using carrier injection in gallium phosphide

Abstract

Advances in knowledge of the properties of GaP in recent years has made practicable the development of devices using injection electroluminescence. A survey is given of the properties of and a method of making one such device, in which light is produced at an alloyed p-n junction on a GaP crystal. Details of current-voltage, current-brightness and other electrical and opto-electrical characteristics are described, and some anomalies noted. Some possible applications are briefly reviewed, and the directions in which progress is to be expected are indicated.