Electroluminescence Studies of Nitride-Rich GaN1xPx SQW Structure Grown by Laser-Assisted Metal-Organic Chemical Vapor Deposition

Abstract

Electroluminescence (EL) measurements of nitride-rich GaN 1-x P x single quantum well (SQW) structures, grown using laser-assisted metalorganic chemical vapor deposition (LA-MOCVD), were performed. The maximum red shift of GaN 1-x P x to the GaN was 50 meV from the result of photoluminescence (PL) measurement and the composition ratio x is estimated to be 0.005. We fabricated light emitting diodes (LEDs) using a dry etching technique. The EL peak energy of the LEDs was 2.98 eV, which is in the vicinity of the energy due to recombination of the exciton bound to a P atom, known as an isoelectronic trap in GaN. We also observed a blue shift of this peak by increasing the injection current.