Electroluminescence Spectra of a Gate Switched MOSFET at Cryogenic and Room Temperatures Agree with Ab Initio Calculations of 4H-SiC/SiO<sub>2</sub>-Interface Defects

Abstract

To reach the theoretical performance limit of 4HSiCMOSFETs the SiC/SiO2interfacedefects along the inversion channel need to be fully identified in order to be avoided. We employa measurement technique that allows to observe energetically resolved trap states at the SiC/SiO2 interface by measuring the electrolumiscence of a gate pulsed MOSFET. The spectra are recorded at room and cryogenic temperatures with a spectrometer and two different amplitudes of the gate pulse. Comparison of the results to literature allows for identification of the L1 line of the D1 center with an energy of 2.9 eV and suggests donoracceptorpair recombination or Z1/2 to be responsible for the emission around 2.5 eV. Ionization energies of PbC and related vacancy centers determined via ab initio calculations show similar results as the experimental data and provide a possible classification of the trap level around 1.8 eV.