Abstract
Light emitting diodes (LED) and laser diodes (LD) based on III-Nitrides emitting in visible spectrum have seen an interesting advance these last few years. Here, we present a simulation study of a multi quantum well MQW InGaN/GaN light emitting diode LED, where the diode active region is formed by a series of several periods of InGaN quantum wells (QWs) and GaN quantum barriers (QBs). We will, first, present free carriers distribution within LED active region and device electroluminescence under forward polarisation. We will, secondly, see indium element content of InxGa1-xN wells and number of InGaN/GaN periods impacts on LED optical properties.
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