Abstract
A p-GaN/i-MgO/n-ZnO nanorod array (NRA) heterojunction light-emitting diode has been fabricated. Its room-temperature electroluminescence spectra under different forward biases revealed a strong emission band across the whole visible region, which was blue-shifted when increasing the forward bias. The origin of this visible emission is considered to be related to oxygen vacancy (VO) defects in different valence states, where the blue emission (∼ 460 nm) comes from neutral oxygen vacancy (VOX ) defects and the green emission (∼ 520 nm) from singly charged oxygen vacancy (VO+ ) defects, while the yellow (∼ 580 nm) and red emission (∼ 670 nm) are attributed to doubly charge oxygen vacancy (VO++ ) defects. These VO defects in different states can convert into one another under different excitation conditions, resulting in the blue-shift of the emission peak as the forward voltage is increased.
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