Abstract
In0.53Ga0.47As0.99N0.01/GaAs0.5Sb0.5 type-II quantum well light-emitting diodes were grown on InP substrates by molecular beam epitaxy (MBE). The peak wavelength of the electroluminescence (EL) was as long as 2.66 µm at 10 K, which is much longer than that (2.08 µm) of In0.53Ga0.47As/GaAs0.5Sb0.5 type-II quantum well diodes on InP substrates. This is due to introduction of nitrogen into the InGaAs layers. A marked blue shift of the peak wavelength with increasing injection current was also observed, which is unique to the type-II quantum well structures.
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