Abstract
The mechanisms of radiative recombination and electroluminescence in the structures based on the films of perovskite nanocrystals CsPbBr3 in the matrix of a semiconductor polymer MEH-PPV have been considered. It has been shown that two mechanisms determine the electroluminescence intensity in light-emitting field-effect transistors with active layers based on the MEH-PPV films:CsPbBr3 (nanocrystals): recombination of the charged carriers injected into the polymer matrix and recombination at the interface polymer/perovskite nanocrystals. The results of theoretical and experimental studies have shown that the superlinear dependence of the electroluminescence intensity on the level of electrical excitation in the light-emitting field-effect transistors based on MEH-PPV:CsPbBr3(nanocrystals) is due to the mechanism of electron tunneling through a potential barrier at the electrode.
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