Abstract
Electroluminescence (EL) in an electrolyte-insulator-semiconductor system is used to study oxide layers in Si-SiO2-Si3N4 and Si-SiO2 structures prepared using various techniques. The EL spectra of all the structures contained the 2.7-eV emission band characteristic of the radiative relaxation of excited sililene centers. A comparative study of the conditions conducive to the formation of such luminescence centers in various structures containing SiO2 layers was made, and their nature was refined.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
