Abstract
This brief review is restricted to a selection of very recent work on bulk properties of commercially important III–V compound semiconductors, mainly GaP and GaAs1-xPx. Some recent theoretical and experimental work on electronhole binding suggests the importance of correlation for isolated N in GaP. The band structure enhancement of the optical efficiency of N in GaAs1-xPx has received clarification. Recent advances in our understanding of the electronic binding energies of the dominant shunt path recombination centres and their relationship with dislocations are reviewed, mainly for LPE GaP.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
