Abstract
This brief review is restricted to a selection of very recent work on bulk properties of commercially important III–V compound semiconductors, mainly GaP and GaAs1-xPx. Some recent theoretical and experimental work on electronhole binding suggests the importance of correlation for isolated N in GaP. The band structure enhancement of the optical efficiency of N in GaAs1-xPx has received clarification. Recent advances in our understanding of the electronic binding energies of the dominant shunt path recombination centres and their relationship with dislocations are reviewed, mainly for LPE GaP.
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