Abstract
We report on the unusually large blue shift of electroluminescence spectrum with increase of the drive current at 77 K in a double-barrier nanoheterostructure with a deep AlSb/InAs0.83Sb0.17/AlSb quantum well grown by MOVPE on n-GaSb:Te substrate. The rise of drive current from 20 to 220 mA led to shift of the electroluminescence spectrum maximum towards higher photon energies by 100 meV. It was shown that this effect is due to indirect (tunneling) radiative transitions between electrons in InAsSb quantum well and heavy holes localized near AlSb/p-GaSb heterointerface. Energy of radiative transition was linearly dependent on applied voltage. In the drive current range of 50–220 mA electroluminescence blue shift was accompanied by the spectrum narrowing by 40 meV and noticeable change of the spectrum shape. With rise in drive current superlinear increase of electroluminescence intensity caused by the nonlinear dependence of tunneling radiative recombination rate on transition energy was observed at 300 and 77 K.
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