Abstract
The radiative recombination at the broken-gap p-GaInAsSb/p-InAs type-II interface is investigated in the temperature range of 4–100 K. It is shown that the electroluminescence band hνA=0.37 eV can be attributed to a large extent to the recombination of electrons from the semimetal channel at the interface with the participation of a deep acceptor level at the interface. At the same time, the band hνB=0.40 eV corresponds to radiative transitions in the InAs bulk to a shallow acceptor level. The participation of the interface states in the recombination across the GaInAsSb/InAs type-II interface becomes appreciable due to the overlapping of wave functions of holes, which are localized at the interface on the solid-solution side, with the wave functions of deep acceptor states.
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