Abstract
Titanium films sputtered on heavily boron-doped (p+) silicon substrates were thermally oxidized to form electroluminescent TiO2/p+-Si heterostructures. The electroluminescence (EL) features a broad spectrum covering red, green, and blue regions. We believe that in TiO2 recombinations between electrons at oxygen-vacancy-related energy levels and holes in the valence band result in the EL. Furthermore, the EL mechanism has been explained in terms of the energy band diagram of the TiO2/p+-Si heterostructure, which possesses an intermediate ultrathin SiOx layer revealed by high resolution transmission microscopy.
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