Electroluminescence from silicon nanoparticles fabricated from the gas phase

Abstract

Electroluminescence from as-prepared silicon nanoparticles, fabricated by gasphase synthesis, is demonstrated. The particles are embedded between an n-dopedGaAs substrate and a semitransparent indium tin oxide top electrode. The totalelectroluminescence intensity of the Si nanoparticles is more than a factor of three higherthan the corresponding signal from the epitaxial III–V semiconductor. This, together withthe low threshold voltage for electroluminescence, shows the good optical properties ofthese untreated particles and the efficient electrical injection into the device. Impactionization by electrons emitted from the top electrode is identified as the origin of theelectrically driven light emission.