Abstract
An electroluminescent structure based on nanostructured porous silicon embedded in a layer of anodic alumina has been suggested and fabricated. The heat conductivity of the alumina matrix markedly exceeds that of the silicon-containing insulators. The effective heat removal makes it possible to attain an 0.5% quantum efficiency of electroluminescence, which is comparable with the best parameters of silicon-based light-emitting devices. The physical phenomena responsible for the emission of light by the structure under study are considered.
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