Abstract
The intensity of electroluminescence (EL) and its spectrum were studied as a function of generation rate, temperature, and intrinsic-layer thickness in a group of hydrogenated amorphous silicon p-i-n diodes (p = p-type, i = intrinsic, and n = n-type). It was found that: (a) the electroluminescence efficiency is as high as the photoluminescence efficiency; (b) there is a power-law dependence of the total EL intensity versus forward current density, except in the low-injection regime; (c) the defect luminescence is mainly a p-i junction effect, but the main band luminescence is a true i-layer bulk effect that is observed in thick samples at room temperature.
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