Electroluminescence from GaN Nanostructures

Alemayehu Keno,Getnet Melese,L V Choudary

doi:10.13189/ujpa.2015.030101

Alemayehu Keno, Getnet Melese + Show 1 more

Open Access

https://doi.org/10.13189/ujpa.2015.030101

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Abstract

Electroluminescence (EL) intensity from GaN nanostructures is reported as a function of different parameters, such excitation wavelength, number of the nanostructures, applied voltage, temperature and time. Quantum confinement model (QCM) is used to develop the model equation that describes the EL intensity as a function of size of the nanostructures. It is shown that as the number of nanostructures decreases EL intensity increases. The highly efficient EL intensity is obtained at low operating voltage (6V). It is observed that EL intensity decreases as the temperature increases and degrades with time.

Highlights

In studying properties of a semiconductor quantum confinement (QC) is important
We designed computational method which is based on theoretical study and numerical analysis of EL intensity from GaN nanostructures as a function of different parameters
We developed model equation that describes the EL intensity as a function of size of the nanoclusters using quantum confinement model and used Fourier transform to transform the size dependent intensity into energy dependent intensity

Summary

Introduction

In studying properties of a semiconductor quantum confinement (QC) is important. It is the electrons confinement in semiconductors along the spatial coordinates [1, 2]. QDs confine electrons, holes, or electron-hole pairs to zero dimensions of the order of electrons de Broglie wavelength. They contain a single unit of charge and give off different colors of light depending on size and specific energy levels [3]. The electrical and optical properties of group III nitride materials are of great interest for light-emitting diodes (LEDs), lasers and other optoelectronic devices because of their band structures and the large range of band gap (0.7-6.2 eV). GaN with a band gap of 3.4 eV has received a great deal of attention for its blue and ultraviolet light emission and because of its application in high-temperature, high-power devices [6]

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