Abstract
The enhancement of light extraction fromSi0.5Ge0.5/Si multiple quantum wells (MQWs) with nanowall structures fabricated by electroncyclotron resonance (ECR) plasma etching is presented. It is shown that the ECRplasma treatment does not damage the crystalline quality. At a driving current of5.5 × 106 A m−2, the light output intensity of the MQWs with nanowall structures shows an enhancementof about 50% compared with that of the original MQWs. In addition to the enhanced lightextraction, the improved optoelectronic properties are also attributed to the strainrelaxation in nanowall structures.
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