Abstract
With CO2 laser assistance, crystalline Ge nanocluster-embedded Ge films were deposited at low temperature using a conventional plasma-enhanced chemical vapor deposition system. Raman spectrum showed a wavenumber peak at 290 cm(-1) which corresponded to the crystalline Ge nanoclusters in the Ge film deposited with CO2 laser assistance. Crystalline Ge nanoclusters embedded in Ge matrices were observed from transmission electron microscopy (TEM) images and electron diffraction pattern. The electroluminescent devices constructed with multilayered Ge nanoclusters-embedded Ge films were fabricated. The experimental results demonstrated that the electroluminescence emission originated from the radiative recombination of the electron-hole pairs in the Ge nanoclusters.
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