Abstract
The intrinsic electroluminescence (EL) of a silicon light-emitting diode with a forward-biased p-n junction is studied. The substantial enhancement of the integrated EL intensity observed with the temperature increasing from the liquid-nitrogen to room-temperature level, which is paralleled by an increase in the EL decay time when the current through the diode is terminated, indicates thermal suppression of the nonradiative recombination channel associated with deep traps. A simple model developed by us for the radiative processes occurring in a p-n junction offers an interpretation for all the experimental data obtained. It is shown that the internal quantum efficiency of the EL may reach a level of a few percent under optimal doping of the diode p and n regions.
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