Abstract
Heteroepitaxy of mid-infrared Sb-based III-V semiconductor devices on highly mismatched wafers such as GaAs and silicon are a promising route towards high-density integration benefiting from the mature fabrication technology of these substrates. This work reports on the electrical performance of heteroepitaxially grown mid-infrared InAs0.915Sb0.085/Al0.12In0.88As multi-quantum wells light emitting diodes on GaAs and offcut Si substrates using molecular beam epitaxy. Both devices exhibited a strong room temperature electroluminescence signal peaking at around 3.4 µm. Analysis of the output power results obtained from both devices revealed that the Si-based LED exhibited higher external quantum efficiency despite the higher defect density which is attributed to the superior thermal properties of the Si wafer.
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