Electroluminescence at a wavelength of 1.5 μm in Si:Er/Si diode structures doped with Al, Ga, and B acceptors

V P Kuznetsov,O N Gorshkov,Z F Krasilnik,M V Kuznetsov,B A Andreev,M O Marychev,A V Kornaukhov,K E Kudryavtsev,V B Shmagin

doi:10.1134/s1063782610120110

Electroluminescence at a wavelength of 1.5 μm in Si:Er/Si diode structures doped with Al, Ga, and B acceptors

V P Kuznetsov, O N Gorshkov + Show 7 more

https://doi.org/10.1134/s1063782610120110

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Journal: Semiconductors

Publication Date: Dec 1, 2010

Affiliation: Institute for Physics of Microstructures, N. I. Lobachevsky State University of Nizhny Novgorod

#Sublimation Molecular-beam Epitaxy #Μm In Si + Show 6 more

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Abstract

Si:Er layers in diode structures were doped with Al, Ga, or B during growth by sublimation molecular-beam epitaxy. As a result, a sharp increase in the electroluminescence intensity at a wavelength of 1.5 μm was observed in diodes with thick bases (as large as 0.8 μm).

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