Abstract
High electric field effects in hydrogenated amorphous silicon carbide alloy have been investigated employing a double insulating ac-driven electroluminescent device structure. The carbon content was systematically varied by changing the deposition conditions. Hot-electron-induced electroluminescence and avalanche multiplication occurred at an electric field of 1.4–2.3 MV/cm in amorphous silicon carbide as in hydrogenated amorphous silicon. From an analysis of the decay of the emission spectrum in terms of the lucky-drift model, the electron mean free path tends to be reduced with an increase in structural disorder due to carbon alloying.
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