Electroless Plating Copper on SiC Particles

Abstract

Abstract. SiCp/Cu composites because of their excellent performance in the aerospace, carrying tools in the field with a wide range of applications, but the poor interfacial bonding limits its application. To improve the interfacial bonding between SiCp and copper, we use Copper Plating on SiCp particles coated handle. The results show that the optimal process parameters for electroless plating copper on SiC particle is followed as:CuSO4•5H2O concentration of 30g/L, EDTA•2Na concentration of 1g/L, potassium ferrocyanide concentration of 2g/L, potassium sodium tartrate concentration 105g/L, plating temperature is 50°C, plating time was 40 minutes.With the increase of the pH from 10 to 13, the uniform dense electroless plating copper exists on SiC particle. With increase of temperature of electroless plating bath, the smooth copper coating on SiC particle can be obtained at 50°C.