Electroless Ni–Mo–P diffusion barriers with Pd-activated self-assembled monolayer on SiO 2

Abstract

Ternary Ni-based amorphous films can serve as a diffusion barrier layer for Cu interconnects in ultralarge-scale integration (ULSI) applications. In this paper, electroless Ni–Mo–P films deposited on SiO 2 layer without sputtered seed layer were prepared by using Pd-activated self-assembled monolayer (SAM). The solutions and operating conditions for pretreatment and deposition were presented, and the formation of Pd-activated SAM was demonstrated by XPS (X-ray photoelectron spectroscopy) analysis and BSE (back-scattered electron) observation. The effects of the concentration of Na 2MoO 4 added in electrolytes, pH value, and bath temperature on the surface morphology and compositions of Ni–Mo–P films were investigated. The microstructures, diffusion barrier property, electrical resistivity, and adhesion were also examined. Based on the experimental results, the Ni–Mo–P alloys produced by using Pd-activated SAM had an amorphous or amorphous-like structure, and possessed good performance as diffusion barrier layer.