Abstract
A novel method of silver electroless deposition on p-Si(100) wafer under the condition of the centrifugal force was developed. The Ag seed layer was firstly prepared on the wafer in a solution of 0.005 mol/l AgNO 3 + 0.06 mol/l HF then the silver film was electrolessly deposited in another electroless Ag bath under the centrifugal fields. The morphology of the prepared silver film was characterized by atomic force microscopy. The crystal orientation of the film was characterized by X-ray diffraction. The experiment results show that the silver film obtained under the condition of the strong centrifugal force is smoother and denser.
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