Abstract
Autocatalytic gold deposits onto palladium-activated GaAs substrates, prepared by chemical displacement, have been found to produce good quality ohmic contacts (in the 10 −5 Ω cm 2 range) provided that the Pd layer thickness and the annealing temperature are optimized. Pd plays the role of catalyst for the subsequent autocatalytic gold deposition; but by using thicker Pd films than necessary to fulfil this “chemical” part, this element also plays another prominent role in the metallurgy of the contact. A transmission electron microscopy (TEM) study has been carried out in order to characterize the growth of Pd nuclei on GaAs. The electrical measurements obtained on such alloyed Au/Pd/ n or p-type GaAs contacts are analyzed in term of a graded amorphous/crystalline junction.
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