Abstract
Abstract The electrical properties of thick-film sandwich devices based on composites of bismuth, ruthenium and indium oxides are presented. The devices are shown to exhibit Poole-Frenkel bulk limited conduction in the temperature range 290 K to 393 K. The activation energies for the compositions were calculated at between 7-5 to 13meV, leading to the conclusion that hopping is the dominant conduction mechanism. After electroforming, the devices exhibited voltage-controlled differential negative resistance and an increase in the conductivity under atmospheric pressure conditions at between 2 to 2-5 orders of magnitude, indicating the possibility of producing memory-switching devices based on the thick-film metal-resistor-metal configuration.
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