Abstract
An analysis of the growth kinetics in electroepitaxy from a limited solution volume is presented. The analytical expression for the growth rate is obtained and applied, as an example, to GaAs. The advantages of using thin solution layers in electroepitaxy of GaAs instead of the previously used systems are discussed. It is shown that limitation of the solution height causes a reduction of the influence of diffusion on the growth rate and results in better homogeneity of the grown layers. Moreover, elimination of convective mixing in the solution volume allows easier control of the growth process.
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