Abstract
Using a simplified Navier-Stokes equation it has been possible to compute the electrodynamic convection generated by a radio frequency coil field for the modern needle-eye float-zone growth of silicon. The calculated electrodynamic force in such a zone shows maximum values up to 11.7 N/cm 3 and generates flow velocities between 25 and 100 cm/s. As only superficial convection can be brought about by electrodynamic forces, the axial and radial dopant incorporation will not be influenced strongly. A comparison of electrodynamic forces with the other forces possibly causing flow in silicon floating zones shows that the electrodynamic forces exceed all other forces by several orders of magnitude.
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