Electrodeposition of Tellurium Atomic Layer on n-GaAs(100) Substrate

Abstract

This paper describes the electrodeposition of Tellurium (Te) atomic layer on n-type GaAs(100) substrates. As-received n-GaAs(100) substrates were treated in 10 % HF and ultraviolet (UV) ozone cleaned. The substrate was then transferred to the ultrahigh vacuum (UHV) electrochemistry chamber and cleaned by Ar+ ion bombardment. The clean substrate was then transferred into the attached electrochemistry ante-chamber, and immersed in a tellurite solution. A number of deposition potentials were investigated. The resulting Auger peak height ratios, Te/Ga, were plotted versus the Te deposition potential. From the Auger ratio plot, below -0.8 V, a reduction feature was observed, at −0.9 V, due to the reduction of Te to Telluride ion (Te0 + 2e− → Te2−). At potentials of -0.9 and below, only a surface limited atomic layer of Te was left on the GaAs surface. An initial investigation of In deposition on this Te coated GaAs surface was also performed.