Abstract
AbstractA stoichiometric InSb film was electrodeposited on a nickel (Ni) substrate in a room‐temperature ionic liquid, 1‐butyl‐1‐methylpyrrolidinium dicyanamide (BMP‐DCA), containing anhydrous InCl3 and SbCl3 with a molar concentration ratio of 1:1. The composition of the deposited InSb film was found to depend on both the applied potential and the deposition charge. Crystalline deposits can be directly obtained at low temperature (60 °C) without any post‐heat treatment. The optical band gap of the InSb film analyzed by using FTIR spectroscopy measurements was approximately 0.17 eV. Results from photocurrent experiments indicate that the electrodeposited InSb film was a p‐type semiconductor.
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