Electrodeposition of Sb2Se3 on indium-doped tin oxides substrate: Nucleation and growth

Abstract

The mechanisms related to the initial stages of the nucleation and growth of antimony selenide (Sb2Se3) semiconductor compounds onto the indium-doped tin oxides (ITO) coated glass surface have been investigated using chronoamperometry (CA) technique. The fabrication was conducted from nitric acid bath containing both Sb3+ and SeO2 species at ambient conditions. No underpotential deposition (UPD) of antimony and selenium onto ITO substrate was observed in the investigated systems indicating a weak precursor–substrate interaction. Deposition of antimony and selenium onto ITO substrate occurred with large overvoltage through 3D nucleation and growth mechanism followed by diffusion limited growth. FE-SEM and XRD results show that orthorhombic phase Sb2Se3 particles with their size between 90 and 125nm were obtained and the atomic ratio for antimony and selenium was 2:2.63 according to the EDX results.