Abstract
The electrochemical behaviors of nonaqueous dimethyl sulfoxide solutions containing TeIV and SbIII were investigated using cyclic voltammetry. On this basis, SbxTey thermoelectric films were prepared by the potentiodynamic electrodeposition technique from nonaqueous dimethyl sulfoxide solution, and the composition, morphology, and thermoelectric properties of the films were analyzed. SbxTey thermoelectric films prepared under different potential ranges all possessed smooth morphology. After annealing treatment at 200°C under N2 protection for 4 h, all the deposited films showed p-type semiconductor properties. Sb1.87Te3.13 thermoelectric film, which most closely approached the stoichiometry of Sb2Te3 and possessed the highest Seebeck coefficient, could be potentiodynamically electrodeposited in the potential range of −200 mV to −600 mV.
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