Electrodeposition of n-type Bi 2Te 3− ySe y thermoelectric thin films on stainless steel and gold substrates

Abstract

Thermoelectric films of n-Bi 2Te 3− y Se y were prepared by potentiostatic electrodeposition technique onto stainless steel and gold substrates at room temperature. These films were used for morphological, compositional and structural analysis by environment scanning electron microscope (ESEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The effect of different substrates on the structure and morphology of Bi 2Te 3− y Se y films and relation between Se content in the electrodepositing solutions and in the films were also investigated. These studies revealed that Bi, Te and Se could be co-deposited to form Bi 2Te 3− y Se y semiconductor compound in the solution containing Bi 3+, HTeO 2 + and H 2SeO 3. The morphology and structure of the films are sensitive to the substrate material. The doped content of Se element in the Bi 2Te 3− y Se y compound can be controlled by adjusting the Se 4+ concentration in the electrodepositing solution. X-ray diffraction analysis indicates that the films prepared at −40 mV versus saturated calomel electrode (SCE) exhibit strong (1 1 0) orientation with rhombohedral structure.