Abstract
Mo-Se thin films have been electrodeposited on conducting tin oxide (SnO2) coated glass substrates from a sulfamatic solution containing Na2MoO4 and H2SeO3 under potentiostatic conditions. The deposition potential varied from −0.6 V to −0.9 V, at a deposition temperature of 20–40 °C and pH 6.5. X-ray diffraction analysis revealed that the overall composition of the films deposited is consistent with the formation of MoO2 and MoSe2. The lattice parameters of the “as-deposited” MoSe2 are a=b=3.2340 A and c=13.2859 A, which fits a hexagonal structure.
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