Abstract
This presentation describes our latest work in the growth of Si films by electrochemical liquid phase epitaxy (ec-LPE). This method is an advanced form of the electrochemical liquid-liquid-solid crystal growth process, where a liquid metal serves both as a cathode for electrodeposition and as a solvent for crystal growth. Using tailored thin liquid metal film electrodes and non-aqueous electrolytes, it is possible to electrodeposit crystalline Si at unusually low temperatures. Data will first be presented that describes suitable electrolytes for Si ec-LPE. Results will then be presented that describe how the liquid metal identity impacts material quality. Finally, the attainable material quality and the requirements for solar grade crystalline Si will be discussed.
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