Abstract
We demonstrate our recent progress in conducting electrodeposition of CuMn thin film using a deep eutectic solvent, which consists of CHCl and ethyl glycol. The sources for Cu ions and Mn ions are C10H14CuO4 and MnCl2, respectively. Plating methods such as potentiostatic, galvanostatic, and current pulsing have been explored with relevant electrochemical parameters optimized and discussed. We determine that the current pulsing route enables the formation of CuMn thin film with desirable Mn amount. Material characterizations including Scanning Electron Microscopy, X-ray diffraction, X-ray Photoelectron Spectroscopy, and X-ray Absorption Microscopy have been carried out. Our results indicate that Mn exists in both metallic form and oxide, and after heat treatment, precipitates with excess Mn are found on the surface. In addition, the conductivity of deep eutectic electrolyte is greatly affected by the ambient moisture and consequently, the plating process is kept in a glovebox to minimize unnecessary interference.
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