Abstract
Cu–Ga–Se precursor thin films have been prepared by electrodeposition techniques on Mo substrates and annealed to crystallize at . The films were characterized by scanning electron microscope, energy dispersive X-ray spectrometry, and X-ray diffraction. The electrodeposited films without an addition agent presented a lot of cracks due to the tension by the formation of Ga–O species, and the crystallized films were aggregated. Addition of as both a supporting electrolyte and a pH adjuster and gelatin as a brightener realized the crack-free films without aggregation. It was found that the composition and morphology of the films were highly dependent on the composition and the addition agent of the solution.
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