Abstract
CdTe thin films have been prepared by electrochemical deposition. The morphological, structural, and optical properties of CdTe thin films deposited with different deposition time were investigated, and the influence of film thickness on the photoelectric characteristics of CdTe thin films was studied. At the deposition time of 1.5 h, CdTe thin films had good optical properties and the photocurrent reached 20 μAcm−2. Furthermore, the Pt/CdS/CdTe/FTO structure was prepared to improve its PEC stability and the photocurrent of 240 μAcm−2 had been achieved.
Highlights
Energy shortage has become the primary problem hindering economic development and world peace and is a focus of attention of all countries in the world
The PEC response properties of Pt/CdS/Cadmium telluride (CdTe)/FTO structure were investigated under illumination of AM 1.5 G, which will be contributive to expand their applications on photoelectric devices
CdTe films were prepared by electrochemical deposition with a three-electrode configuration
Summary
Energy shortage has become the primary problem hindering economic development and world peace and is a focus of attention of all countries in the world. Cadmium telluride (CdTe) has a number of attractive properties as a photocathode material for PEC water splitting and absorbing materials in photovoltaic cells [2]. It has a direct band gap of 1.45 eV and high light absorption coefficient, which can reach 104 cm−1 in the visible light range [3,4,5]. It is easy to operate without high vacuum or a high temperature environment Both p-type and n-type CdTe have been deposited and electrodeposition potential was found to be the key factor [11]. Even though electrodeposited CdTe thin films and their PEC properties have been reported [15], the structure of CdTe photocathode still needs optimization for solar energy water splitting application. The PEC response properties of Pt/CdS/CdTe/FTO structure were investigated under illumination of AM 1.5 G, which will be contributive to expand their applications on photoelectric devices
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