Abstract
Copper-tellurium films were electrochemically deposited from a solution containing CuCl 2 , TeO 2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu 2 Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl 2 ] = 1.0 x 10 -3 M (= kmol m -3 ), [TeO 2 ] = 4.0 x 10 -4 M, and pH = 1.
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