Abstract
One-step method for the electrodeposition of thin Cu2ZnSnSe4 (CZTSe) film onto a polyaniline/FTO/glass substrate was developed. Polyaniline film was preliminary obtained also by electrochemical deposition onto the FTO/glass substrate. The nucleation of CZTSe in the course of the film formation on the polyaniline surface was studied by chronoamperometry method. This process can be described by the instantaneous crystallization model. According to SEM data, the films consist of 25–50 nm nanocrystals which can form large crystallites. Photocurrent was established to increase up to 20 times in the CZTSe/polyaniline/FTO/glass heterojunction in comparison with the polyaniline free structure. In the heterojunction, polyaniline acts as a hole transport layer improving the charge transfer to the FTO electrode and preventing circuit shorting because of porosity of the CZTSe film. Graphical abstract
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